Design of FinFET Based Self-Biased OTA for Low Power Applications

Abstract

This work explores the design of an Operational Trans conductance Amplifier (OTA) using Independent Gate (IG) FinFET. For the different configurations of FinFET such as IG, Low Power (LP) and Shorted Gate (SG), optimal gm and ro values have been found. FinFET devices are used to increase the performance by reducing the power dissipation as the front and back gate voltages are controlled independently. The designed three stage FinFET based OTA operates at 0.5 V power supply and achieves gain of 64 dB, 33 phase margin and 20 MHz unity gain frequency. The proposed OTA circuit is tested in Cadence virtuoso with FinFET 32nm BSIM-CMG model.