The Ultrathin Nio Hole-Transporter for Enhanced Photovoltaic Efficiency of Cs0.09fa0.91pbi3-Based Large Area Perovskite Solar Cell Via Synergism of Hole Induction and Extraction

Abstract

The Cs0.09FA0.91PbI3-based perovskite large area solar cell with ultrathin NiO hole-transporter is prepared via a multiple sputtering-coating-annealing method. The ultrathin NiO HTLs modified Cs0.09FA0.91PbI3-based large area photovoltaic device exhibits PCE of ~17.94% (120×120 mm2), showing ~300% enhancement than intrinsic Cs0.09FA0.91PbI3-based device. It mainly attributes to the ultrathin NiO HTLs. Besides optimized lattice interface and barrier gradient, the ultrathin NiO HTLs, with hole induction by charge compensation of Ni2+/Ni3+-interstitial oxygen synergism and hole extraction by regulated Fermi level, can ameliorate carrier dynamic equilibrium for achieving high PCE, making it being competitive in photovoltaic device.

Keywords: Photovoltaic, Ultrathin NiO HTLs, Hole Induction/Extraction, Fermi Level Regulation