Mxene-Carbon Quantum Dot Hybrid Memristor with Progressive Conductance Tuning for Artificial Synaptic Application

Abstract

MXenes are emerging two-dimensional (2D) nanomaterials comprised of multiple atomic layers of transition metal carbides/nitrides/carbonitrides. However, due to the metallic analogous conductivity, their application in electronic devices is restricted. In this work, it is discovered that the straightforward surface modification of MXene holds promise for expanding its functionality into the semiconductor field. The zero-dimensional carbon quantum dots (0D-CDs) are designed and adopted to allow the surface modification of MXene. The uniformly distributed CDs are introduced to function as a charge storage element, thereby enhancing charge transport process, reducing power consumption, and improving stability of MXene-based electronics. Notably, the CDs-modified MXene memristor exhibits outstanding bidirectional tunable memristive performance and replicates synaptic plasticity behavior, which facilitates the development of electronic synapses. This study unveils the potential of applying MXene for high-performance memristors through CDs modulation strategy, and provides an effective pathway for expanding the metallic conductive 2D nanomaterials into non-volatile memory and artificial synapses.

Keywords: MXene, carbon quantum dot, memristor, surface engineering, filamentary conduction, artificial synapse