The Transparent Cui/Ingazno4 Pn Junction Towards Enhanced Photovoltaic Response Via Potential Regulation of Ultrathin Nio Transition Layer

Abstract

Transparent device in ultrathin NiO layer modified CuI/InGaZnO4 pn junction is prepared via sputtering-in situ iodization method. CuI/NiO/InGaZnO4 exhibits transmittance ~85-90%, photovoltaic enhancement ~1.3×103-folds, stable output in 15 days. It mainly attributes to ultrathin NiO layer. Besides appropriate potential gradient, ultrathin NiO layer, with surface optimization and p-type injection via Cu+/Cu2+, Ni2+/Ni3+-interstitial oxygen synergism, can improve kinetic equilibrium for PCE-transparency balance, while exhibiting good stability via the all inorganic structures, making them being competitive in transparent devices.

Keywords: Transparent, Photovoltaic, Ultrathin transition layer, Potential regulation