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Fang Yang
Shanghai University of Electric Power
Shanghai
China
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Shanghai University of Electric Power
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Scholarly Papers (1)
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Vertical GaN TG-MOSFET Power Device Model Considering Physical Effects
Number of pages: 21
Posted: 11 Mar 2026
Wenlong Yang
,
Haozhe Lian
,
Weijing Liu
, Fang Yang,
Xiaodong Tang
and
Wei Bai
Shanghai University of Electric Power, Shanghai University of Electric Power, Shanghai University of Electric Power, Shanghai University of Electric Power,
affiliation not provided to SSRN
and
affiliation not provided to SSRN
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