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Fang Yang

Shanghai University of Electric Power

Shanghai

China

SCHOLARLY PAPERS

1

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39

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0

Scholarly Papers (1)

1.

Vertical GaN TG-MOSFET Power Device Model Considering Physical Effects

Number of pages: 21 Posted: 11 Mar 2026
Shanghai University of Electric Power, Shanghai University of Electric Power, Shanghai University of Electric Power, Shanghai University of Electric Power, affiliation not provided to SSRN and affiliation not provided to SSRN
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Abstract:

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