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Boxu Yan

South China Normal University

483 Wushan Str.

Tianhe District

Guangzhou, 510631, 510642

China

SCHOLARLY PAPERS

1

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41

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0

Scholarly Papers (1)

1.

Direct Evidence for Oxygen-Vacancy-Mediated Domain Switching in Hf 0.5 Zr 0.5 O 2  Ferroelectric Films

Number of pages: 8 Posted: 18 Apr 2026
South China Normal University, South China Normal University, South China Normal University, Liaocheng University, South China Normal University, South China Normal University, South China Normal University, Nanjing University and South China Normal University
Downloads 41 (1,196,171)

Abstract:

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HfO2-based ferroelectric films, Oxygen vacancies, Phase transition, Domain switching, Ferroelectric memory