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Yiran Zhang

affiliation not provided to SSRN

  • affiliation not provided to SSRN

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Principle of pH-sensitive graphene-based field-effect transistors caused by double layer capacitance and faradaic reactions

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Principle of pH-sensitive graphene-based field-effect transistors caused by double layer capacitance and faradaic reactions

Number of pages: 22 Posted: 27 May 2026
Shuo Wang, Koichi Jeremiah Aoki, Han Chen, Min Zhang, Yiran Zhang and Pengfei Lian
Shanghai Institute of Aerospace System Engineering, affiliation not provided to SSRN, affiliation not provided to SSRN, Shandong University of Science and Technology, affiliation not provided to SSRN and affiliation not provided to SSRN
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Abstract:

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graphene field-effect transistor, pH sensing, electric double layer, faradaic reactions, graphene oxide reduction, Dirac point