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Minhan Mi

Xidian University

No. 2 South Taibai Road, Xi’an, Shaanxi

Xi'an, 710071

China

  • Xidian University

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Scholarly Papers (1)

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Linearity Enhancement of Double-Channel InAlN/GaN HEMTs by Multi-Threshold-Voltage Engineering with Tri-Gate Control

Number of pages: 9 Posted: 13 Jun 2026
Pengfei Wang, Jingyun Yao, Minhan Mi, Xiang Du, Feiyang Chen, Zhentong Huang, Xiangxin Cao, Zihao Yang, Xinyue Zhang, Yinyin Liang, Xiaohua Ma and Yue Hao
Xidian University, Xidian University, Xidian University, Xidian University, Xidian University, Xidian University, Xidian University, Xidian University, Xidian University, Xidian University, Xidian University and Xidian University
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Abstract:

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InAlN/GaN, high electron mobility transistor, Tri-gate, double-channel, high linearity