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Oksana Fursenko

affiliation not provided to SSRN

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Towards analog resistive switching by using multi-layered RRAM devices based on HfO2, Al2O3, TiO2 materials

Number of pages: 17 Posted: 19 Jun 2026
Keerthi Dorai Swamy Reddy, Eduardo Pérez, Thomas Lenke, Oksana Fursenko, Steffen Marschmeyer, Markus Andreas Schubert, walter batista pessoa and Christian Wenger
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Brandenburg University of Technology Cottbus-Senftenberg
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RRAM artificial synapse, multi-metal-oxide switching layers, analog switching, artificial synapse