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Mahdi Tavazoei
Islamic Azad University (IAU) - Department of Electrical and Electronic Engineering
Iran
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Scholarly Papers (1)
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A Single-ended and Bit-interleaving 7T SRAM Cell in Sub-threshold Region with a Small Area Consuption
International Journal of Electronic Design and Test (JEDT) Vol.1 No.3, 2019
Number of pages: 11
Posted: 17 Jun 2019
Mahdi Tavazoei and
Farhad Razaghian
Islamic Azad University (IAU) - Department of Electrical and Electronic Engineering and
affiliation not provided to SSRN
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Abstract:
Sub-threshold SRAM, Bit interleaving, Half-select, Boosted voltage, Multi Vth transistor
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