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Shengli Wu

Xi'an Jiaotong University (XJTU) - Key Laboratory for Physical Electronics and Devices of the Ministry of Education

China

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Scholarly Papers (1)

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Room Temperature Bonding of GaN on Diamond Wafers by Using Mo/Au Nano-Layer for High-Power Semiconductor Devices

Number of pages: 19 Posted: 31 Jul 2019
Xi'an Jiaotong University (XJTU) - Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University (XJTU) - Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University (XJTU) - Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University (XJTU) - Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Xi'an Jiaotong University (XJTU) - Key Laboratory for Physical Electronics and Devices of the Ministry of Education
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Abstract:

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GaN-On-Diamond, Mo/Au Nano-Layer, Bonding, High-Power Devices