Author Page for Vellaisamy A. L. Roy

Solution Processed Rare-Earth Doped High-K Dielectrics for Low-Power Igzo Transistors

Number of pages: 35 Posted: 22 Jan 2023

Qi-Jun Sun, Xin-Hua Zhao, Jiaqing Zhuang, Zhen hua Tang, Xin-Gu Tang and Vellaisamy A. L. Roy

Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology and University of Glasgow - James Watt School of Engineering

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Abstract:

2.

Dual-Approach for Synergistic Doxorubicin Removal Through Adsorption-Photocatalysis

Number of pages: 40 Posted: 19 Mar 2025

Muhammad Rizwan, Kanza Kayani, Zahid Qamar, zhenping Liu and Vellaisamy A. L. Roy

Government of the United States of America - Air University, Government of the United States of America - Air University, Government of the United States of America - Air University, South China Normal University and University of Glasgow - James Watt School of Engineering

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Abstract:

3.

Atomic site-targeted doping in Ti₂FeNiSb₂double half-Heusler alloys: zT improvement via selective band engineering and point defect scattering

Number of pages: 32 Posted: 08 Sep 2022

Rahidul Hasan, Seungki Jo, Wei Shi, Seung Yong Lee, Won-Seon Seo, Vaskuri C. S. Theja, Vellaisamy A. L. Roy, Kyung Tae Kim, Sang-il Kim, Sung Wng Kim, Hyun-Sik Kim and Kyu Hyoung Lee

Yonsei University, Korea Institute of Materials Science, Yonsei University, Yonsei University, Yonsei University, City University of Hong Kong (CityU), University of Glasgow - James Watt School of Engineering, Korea Institute of Materials Science - Powder Materials Division, University of Seoul - Department of Materials Science and Engineering, Sungkyunkwan University, University of Seoul and Yonsei University - Department of Materials Science and Engineering

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Vellaisamy A. L. Roy

University of Glasgow - James Watt School of Engineering

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Scholarly Papers (3)

Solution Processed Rare-Earth Doped High-K Dielectrics for Low-Power Igzo Transistors

Abstract:

Dual-Approach for Synergistic Doxorubicin Removal Through Adsorption-Photocatalysis

Abstract:

Atomic site-targeted doping in Ti₂FeNiSb₂double half-Heusler alloys: zT improvement via selective band engineering and point defect scattering

Abstract:

Vellaisamy A. L. Roy

University of Glasgow - James Watt School of Engineering

3

174

0

Scholarly Papers (3)

Solution Processed Rare-Earth Doped High-K Dielectrics for Low-Power Igzo Transistors

Abstract:

Dual-Approach for Synergistic Doxorubicin Removal Through Adsorption-Photocatalysis

Abstract:

Atomic site-targeted doping in Ti2FeNiSb2 double half-Heusler alloys: zT improvement via selective band engineering and point defect scattering

Abstract:

Atomic site-targeted doping in Ti₂FeNiSb₂double half-Heusler alloys: zT improvement via selective band engineering and point defect scattering