Tomohisa Kato

National Institute of Advanced Industrial Science and Technology (AIST)

1-3-1 Kasumigaseki

Chiyoda-ku

Tokyo, 100-8921

Japan

SCHOLARLY PAPERS

2

DOWNLOADS

34

SSRN CITATIONS

1

CROSSREF CITATIONS

0

Scholarly Papers (2)

1.

Temperature Dependence of Double Shockley Stacking Fault Behavior in Nitrogen-Doped 4h-Sic Studied by In-Situ Synchrotron X-Ray Topography

Number of pages: 29 Posted: 02 Mar 2020
Nagoya University - Department of Materials Process Engineering, Nagoya University - Department of Materials Process Engineering, Aichi Science and Technology Foundation - Aichi Synchrotron Radiation Center, Showa Denko K. K., Nagoya University - Center for Integrated Research of Future Electronics (CIRFE), National Institute of Advanced Industrial Science and Technology (AIST), Nagoya University - Department of Materials Process Engineering and Nagoya University - Department of Materials Process Engineering
Downloads 28 (568,915)
Citation 1

Abstract:

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Silicon carbide, In situ, Synchrotron X-ray topography, Dislocation gliding, Stacking faults

2.

Immobilization of Partial Dislocations Bounding Double Shockley Stacking Faults in 4h-Sic Observed by in Situ Synchrotron X-Ray Topography

Number of pages: 27 Posted: 12 May 2021
Nagoya University - Department of Materials Process Engineering, Nagoya University - Department of Materials Process Engineering, Showa Denko K. K., State University of New York (SUNY), Stony Brook - Department of Materials Science and Chemical Engineering, State University of New York (SUNY) - Department of Materials Science and Chemical Engineering, Aichi Science and Technology Foundation - Aichi Synchrotron Radiation Center, Nagoya University - Center for Integrated Research of Future Electronics (CIRFE), National Institute of Advanced Industrial Science and Technology (AIST), Nagoya University - Department of Materials Process Engineering and Nagoya University - Department of Materials Process Engineering
Downloads 6 (724,620)

Abstract:

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