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Hong-Hui Wu

University of Science and Technology Beijing - Beijing Advanced Innovation Center for Materials Genome Engineering

30 Xueyuan Road, Haidian District

Beijing, 100083

China

SCHOLARLY PAPERS

1

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79

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Scholarly Papers (1)

1.

Memory Effect in Antiferroelectrics: A Systematic Analysis on Various Electric Hysteresis Loops

Number of pages: 18 Posted: 05 Oct 2020
University of Science and Technology Beijing - Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing - Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing - Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing - Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing - Beijing Advanced Innovation Center for Materials Genome Engineering, University of Shanghai for Science and Technology - School of Medical Instrument and Food Engineering, University of Science and Technology Beijing - Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing - Beijing Advanced Innovation Center for Materials Genome Engineering and University of Science and Technology Beijing - Beijing Advanced Innovation Center for Materials Genome Engineering
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Abstract:

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antiferroelectric, phase transition, memory effect, domain orientation, defect