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Manoharan Muruganathan

Japan Advanced Institute of Science and Technology

Tatsunokuchi

Ishikawa, 932-1292

United States

  • Japan Advanced Institute of Science and Technology

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Scholarly Papers (1)

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Defect induced magnetism in monolayer HfSe2: An ab initio study

Applied Surface Science, volume 491, 2019 [10.1016/j.apsusc.2019.06.119]
Number of pages: 9 Posted: 08 Aug 2024
Anita Yadav, Shailesh Kumar, Manoharan Muruganathan and Rakesh Kumar
Abdus Salam International Centre for Theoretical Physics (ICTP), CSIRO Manufacturing, Japan Advanced Institute of Science and Technology and Indian Institute of Technology (IIT), Ropar
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Abstract:

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Magnetism, First-principles calcultions, Defect studies, Electronic Structure