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Guoxing Chen

Henan Polytechnic University

China

  • Henan Polytechnic University

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Indirect to Direct Bandgap Transition and Enhanced Optoelectronic Properties in WSe 2 Monolayer Through Forming WSe 2/MoSi 2N 4 Bilayer

Number of pages: 12 Posted: 22 Nov 2021
Xiaolin Cai, Zhengwen Zhang, Aiqin Song, Guoxing Chen, Weiyang Yu, Xingtao Jia, Xuefeng Yang, Yujin Liu and Yu Jia
Henan Polytechnic University, Henan Polytechnic University, Henan Polytechnic University, Henan Polytechnic University, Henan Polytechnic University - School of Physics and Electronic Information Engineering, Henan Polytechnic University, Henan Polytechnic University, Henan Polytechnic University and Henan University
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First-principles calculations, WSe2 monolayer, Direct bandgap, heterostructure