Liaocheng, 252000
China
Liaocheng University
high pressure, Aluminum nitride, Electronic property, High-energy-density materials
High pressure, Yttrium nitrides, Polymeric nitrogen
c-LLZO, dielectric properties, Grain boundaries, High temperature and pressure
Aluminum-Doped ZnO NRs, B-Doped Diamond, Heterojunction, Photoluminescence, Electrical Transport Behavior
N-TiO2 NRs, P-lightly boron-doped diamond, Optoelectronic transport behavior, High temperature, Backward diode