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daxiang xie

Shanghai Institute of Technology

China

  • Shanghai Institute of Technology

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Ultra-Deep Removal of Dibenzothiophene Over Hollow Core-Shell N-Doped Graphene Nanospheres Anchored Bimetallic Single Atoms Under Visible Light

Number of pages: 35 Posted: 03 Jan 2022
yingying ma, mengzhu zhang, meng sun, daxiang xie, Nchare Mominou, chunyu jing and lei wang
Shanghai Institute of Technology, Shanghai Institute of Technology, Shanghai Institute of Technology, Shanghai Institute of Technology, affiliation not provided to SSRN, Shanghai Institute of Technology and Shanghai Institute of Technology
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Hollow core-shell materials, N-doped graphene, Single atoms, dibenzothiophene