6H-SiC, irradiation, cavities, Stacking faults, DFT
ion implantation, He cavities, diffusion, Fe clusters, DFT
Fe2AlB2, He irradiation, TEM, Annealing, Vacancy-type defects, grain boundary
Solute segregation, Grain boundaries, tungsten, First-principles calculations, Transmission electron microscopy (TEM), Monte Carlo
nanocrystalline SiC, stacking faults, He irradiation, MD simulations, Transmission electron microscopy (TEM)