Qiu xiang Liu

Guangdong University of Technology

No. 100 Waihuan Xi Road

Guangzhou Higher Education Mega Center

Guangzhou, 510006

China

  • Guangdong University of Technology

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Photoelectric Characteristics of Al-Doped Zno/P-Si Diode Prepared by Radio Frequency Magnetron Sputtering

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Photoelectric Characteristics of Al-Doped Zno/P-Si Diode Prepared by Radio Frequency Magnetron Sputtering

Number of pages: 16 Posted: 15 Feb 2022
Xiao ling Lu, Xiao bin Guo, Feng chao Su, Wen hai Qiu, Zheng Su, Jun Li, Wen hua Li, Yan ping Jiang, Zhen hua Tang, Qiu xiang Liu and Xin-Gu Tang
Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology, Guangdong University of Technology and Guangdong University of Technology
Downloads 38 (962,685)

Abstract:

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Al-doped ZnO, radio frequency magnetron sputtering, ultraviolet irradiation, photoelectric characteristics