Hongying Mei

affiliation not provided to SSRN

No Address Available

SCHOLARLY PAPERS

2

DOWNLOADS

37

SSRN CITATIONS

0

CROSSREF CITATIONS

0

Scholarly Papers (2)

1.

Characterization of Single Event Effect Simulation in Inp-Based High Electron Mobility Transistors

Number of pages: 10 Posted: 17 Feb 2022
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Zhengzhou University
Downloads 21 (988,586)

Abstract:

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InP based HEMT, SEE, LET, drain voltage

2.

The Crystal Structures and Fluorescent Properties of Balu1.95ce0.05al4-Xgaxsio12 (1≤X≤2.5) Solid Solutions

Number of pages: 20 Posted: 21 Mar 2022
affiliation not provided to SSRN, South China University of Technology, Kunming University of Science and Technology, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Peking University, affiliation not provided to SSRN and Jiangxi University of Science and Technology
Downloads 16 (1,043,636)

Abstract:

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white LEDs;phosphor, quantum yield, fluorescence thermal stability