Tantalum pentoxide nanosheets (Ta2O5), Hydrothermal process, Dielectric constant, Dielectric loss, Relaxation time.
Metal chalcogenide, thermal evaporation, SHI irradiation, Seebeck coefficient, and thermoelectric property
Tantalum pentoxide nanosheets (Ta2O5), Hydrothermal process, dielectric constant, Dielectric loss, Relaxation time
Dielectric relaxation, Electrical modulus, Impedance
NPN BJTs, nitrogen ion irradiation, radiation-induced degradation, bias-dependent degradation, base-emitter junction bias, displacement damage