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ZhiQiang Fan

Changsha University of Science and Technology

Wangxin Rd

Changsha, 410004

China

  • Changsha University of Science and Technology

SCHOLARLY PAPERS

3

DOWNLOADS

94

TOTAL CITATIONS

0

Scholarly Papers (3)

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1.

Schottky Barrier Diode and Photoelectric Device Based on Two Dimensional Noble Transition-Metal Sulfides Vertical Heterojunction

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Schottky Barrier Diode and Photoelectric Device Based on Two Dimensional Noble Transition-Metal Sulfides Vertical Heterojunction

Number of pages: 18 Posted: 05 Apr 2024
Qian Liu, Xu-Dong Huang, Dan Wu, Fang Xie, ZhiQiang Fan and Hai-Qing Xie
Changsha University of Science and Technology, Changsha University of Science and Technology, Changsha University of Science and Technology, Yichun University, Changsha University of Science and Technology and Changsha University of Science and Technology
Downloads 31 (1,341,098)

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Two-dimensional noble transition-metal sulfides, Schottky barrier diode, current rectification, Photocurrent, Density functional theory

Schottky Barrier Diode and Photoelectric Device Based on Two Dimensional Noble Transition-Metal Sulfides Vertical Heterojunction

Number of pages: 18 Posted: 07 Feb 2024
Qian Liu, Xu-Dong Huang, Dan Wu, Fang Xie, ZhiQiang Fan and Hai-Qing Xie
Changsha University of Science and Technology, Changsha University of Science and Technology, Changsha University of Science and Technology, Yichun University, Changsha University of Science and Technology and Changsha University of Science and Technology
Downloads 23 (1,473,203)

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Two-dimensional noble transition-metal sulfides, Schottky barrier diode, current rectification, Photocurrent, Density Functional Theory

2.

Mechanical Force Adjusts the Bonding Orientation with Respect to the Electrode to Regulate Electronic Transport in Single-Molecule Devices

Number of pages: 17 Posted: 21 Feb 2025
Tong-Hui Zhou, Lin Long and ZhiQiang Fan
Chongqing College of Mobile Communication, Chongqing College of Mobile Communication and Changsha University of Science and Technology
Downloads 21 (1,448,301)

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First-principle, Molecular device, Bonding orientation, Negative differential resistance

3.

High-Performance Monolayer or Bilayer Sic Short Channel Transistors with Metallic 1t-Phase Mos2 Contact

Number of pages: 15 Posted: 22 Mar 2022
Hai-Qing Xie, Xi-Ya Cai, Kai-Yue Cui, Xin-Bo Yi, Jun-Lin Lu and ZhiQiang Fan
Changsha University of Science and Technology, Changsha University of Science and Technology, Changsha University of Science and Technology, Changsha University of Science and Technology, Changsha University of Science and Technology and Changsha University of Science and Technology
Downloads 19 (1,459,862)

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Quantum transport, Density functional theory, Field-effect transistor, Schottky barrier