default author photo

Si-Cong Zhu

Wuhan University of Science and Technology

947 Heping Avenue,Qingshan District

null

Wuhan, 430081

China

  • Wuhan University of Science and Technology

SCHOLARLY PAPERS

5

DOWNLOADS

198

TOTAL CITATIONS

0

Scholarly Papers (5)

Actions:
Email selected abstracts
1.

Mn2no2 Mxene as a Promising Anode Material for Metal Ion Batteries: A First-Principles Study

Number of pages: 16 Posted: 21 Mar 2022
Pengwei Gong, Xiaolin Zhang, Fangqi Liu, Kailun Yao and Si-Cong Zhu
Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Huazhong University of Science and Technology and Wuhan University of Science and Technology
Downloads 49 (1,074,648)

Abstract:

Loading...

MXene, Ion batteries, First-principles, Energy storage

2.

Time-Domain Flexible Pulse Fiber Laser Generation and High-Power Evolution Based on Inter-Band Excitation of Lead Sulfide Nanoflakes

Number of pages: 14 Posted: 25 Jul 2022
Kun Guo, Chao Fan, Qiang Yu, Jin Wang, Haiqin Deng, Tao Wang, Fangqi Liu, xianguang Ding, Zhenghui Pan, Si-Cong Zhu, Jie Yang, Qinglin Zhang, Jian Wu, Pu Zhou and Zongfu Jiang
affiliation not provided to SSRN, Hunan University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Wuhan University of Science and Technology, affiliation not provided to SSRN, Tongji University, Wuhan University of Science and Technology, Tongji University, Hunan University, National University of Defense Technology, National University of Defense Technology and National University of Defense Technology
Downloads 42 (1,157,785)

Abstract:

Loading...

Lead chalcogenides, PbS nanoparticle, Pulse fiber lasers, passive mode-locking, MOPA

3.

Regulation of performance in antiferromagnetic tunnel junctions through interfacial spin coupling mechanisms

Downloads 39 (1,249,711)

Regulation of performance in antiferromagnetic tunnel junctions through interfacial spin coupling mechanisms

Number of pages: 12 Posted: 26 Dec 2025
Han Li, Keqian He, Chuan Xie, Xiaoran Du, Jie Wang, Xiangyang Zhao, yu Wang, Si-Cong Zhu and xiao Liu
Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology and Wuhan University
Downloads 24 (1,459,262)

Abstract:

Loading...

Homospin resonance coupling；2D-AFMTJ ；FeTe ；Tunnel magnetoresistance ；In-plane and out-of-plane devices

Regulation of performance in antiferromagnetic tunnel junctions through interfacial spin coupling mechanisms

Number of pages: 17 Posted: 29 Jan 2026
Han Li, Keqian He, Chuan Xie, Xiaoran Du, Jie Wang, Xiangyang Zhao, yu Wang, Si-Cong Zhu and xiao Liu
Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology and Wuhan University
Downloads 15 (1,589,301)

Abstract:

Loading...

2D-AFMTJ, FeTe, Homospin resonance coupling, Tunnel magnetoresistance, In-plane and out-of-plane devices

4.

Large Magnetoresistance in Phosphorus-Sulfur Compounds (Tmps4) Based Temperature Regulated Spin-Caloritronic Devices

Number of pages: 14 Posted: 11 Jul 2022
Tongtong Wang, Bin Liu, Sheng Liu, Si-Cong Zhu and Yan Lu
Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology and Wuhan University of Science and Technology
Downloads 38 (1,209,354)

Abstract:

Loading...

Half-metal, Giant magnetoresistance, Temperature regulated, Spin-caloritronic device, Spintronic device

5.

Gate Voltage-Controlled Spin-Rectifier Diode Based on Janus Transition Metal Nitride Mxene Nnanosheets with Spin Gapless Semiconductor

Number of pages: 15 Posted: 25 Aug 2023
Pengwei Gong, Xiaolin Zhang, Fangqi Liu and Si-Cong Zhu
Wuhan University of Science and Technology, Wuhan University of Science and Technology, Wuhan University of Science and Technology and Wuhan University of Science and Technology
Downloads 30 (1,318,317)

Abstract:

Loading...

Nitride MXene, spin rectifier diode, electric field, rectification ratio, magnetoresistance