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Shashank Shekhar Mishra

affiliation not provided to SSRN

  • affiliation not provided to SSRN

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Difference in Growth Rates at {110} and {111} Crystal/Melt Interfaces of Silicon

Number of pages: 16 Posted: 11 May 2022
Shashank Shekhar Mishra, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito and Kozo Fujiwara
affiliation not provided to SSRN, Tohoku University - Institute for Materials Research, Tohoku University - Institute for Materials Research, Tohoku University - Institute for Materials Research, Tohoku University - Institute for Materials Research and Tohoku University - Institute for Materials Research
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Abstract:

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A1. Interfaces, A1. Directional solidification, B2. Semiconducting silicon