Yujie Bai

Southwest Jiaotong University

No. 111, Sec. North 1, Er-Huan Rd.

Chengdu

Chengdu, 610031

China

  • Southwest Jiaotong University

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Optimization of the Cycle Numbers of Tio2 Resistive Random-Access Memory Devices by Annealing

Number of pages: 19 Posted: 22 Jul 2022
Shuyi Yao, Yuanxing Li, Fengying Wang, Yujie Bai, Yao Wang, Zongtao Zhu and Hui Chen
Southwest Jiaotong University, Southwest Jiaotong University, Southwest Jiaotong University, Southwest Jiaotong University, Southwest Jiaotong University, Southwest Jiaotong University and Southwest Jiaotong University
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resistive random-access memory, titanium oxide structure transformation, annealing, cycle number.