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Shaofeng Zhang

Henan University of Science and Technology

263 Kaiyuan Ave, Luolong Qu

Luoyang Shi

China

  • Henan University of Science and Technology

SCHOLARLY PAPERS

3

DOWNLOADS

59

TOTAL CITATIONS

0

Scholarly Papers (3)

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1.

High-Capacity and Reversible Hydrogen Storage of Alkali Metals (Li, Na, and K) Decorated Bec Monolayer Revealed by First-Principles Approach

Number of pages: 32 Posted: 13 Aug 2025
Hanxin Xing, Siya Jia, Yongliang Yong, Zhiyong Liu, Wentao Guo, Shaofeng Zhang, Xinxin Wang and Xinli Li
Henan University of Science and Technology, Henan University of Science and Technology, Henan University of Science and Technology - School of Physics and Engineering, Henan University of Science and Technology, Henan University of Science and Technology, Henan University of Science and Technology, Henan University of Science and Technology and Henan University of Science and Technology
Downloads 27 (1,372,601)

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Hydrogen storage materials, BeC monolayer, Alkali metal decoration, Hydrogen storage capacity, Reversibility, First-principles method

2.

Tunable Schottky Barrier in Van Der Waals Heterojunction Composed of Graphene and Sicp4 from First Principle Calculations

Number of pages: 10 Posted: 19 Sep 2022
Shaofeng Zhang and Zhaowu Wang
Henan University of Science and Technology and Henan University of Science and Technology
Downloads 18 (1,470,786)

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Schottky contact, van der Waals heterojunction, two-dimensional materials, Graphene, SiCP4, Density Functional Theory

3.

Tunable Electronic Properties of the Ferromagnetic Vs2/Znpse3 Van Der Waals Heterostructure Under External Electric Field

Number of pages: 28 Posted: 12 Jan 2024
Shuai Zhang, Wenbo Niu, Jianhua Yang, Dawei Kang and Shaofeng Zhang
Henan University of Science and Technology, Henan University of Science and Technology, Henan University of Science and Technology, Henan University of Science and Technology and Henan University of Science and Technology
Downloads 14 (1,509,872)

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Two-dimensional, VS2/ZnPSe3 heterostructure, Ferromagnetic semiconductor, Band alignment, Electric field, First-principles calculations