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Guangchen Zhang

Beijing Institute of Technology

5 South Zhongguancun street

Center for Energy and Environmental Policy Researc

Beijing, 100081

China

SCHOLARLY PAPERS

1

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Scholarly Papers (1)

1.

The Improved Properties of Solution-Based Ingasno (Igto) Thin Film Transistor Using the Modification of Inzno (Izo) Layer

Number of pages: 27 Posted: 21 Oct 2022
Beijing Institute of Technology, Beijing Institute of Technology, Beijing Institute of Technology - School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing Institute of Technology - School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing Institute of Technology, Beijing Institute of Technology, affiliation not provided to SSRN, Chongqing BOE Display Technology Co., Ltd., affiliation not provided to SSRN, affiliation not provided to SSRN and Beijing Institute of Technology - School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display
Downloads 40 (1,183,237)

Abstract:

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Thin film transistor, Heterojunction, Sol-gel process, InGaSnO.