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Kyoungtae Hwang

Korea Institute of Science and Technology (KIST)

14 gil 5 Hwarangno, Seongbuk-gu

Seoul, 02792

Korea, Republic of (South Korea)

  • Korea Institute of Science and Technology (KIST)

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High-Performance Carbon Nanotube Field-Effect Transistors with Electron Mobility of 39.40 Cm2v-1s-1 Using Anion–Π Interaction Doping

Number of pages: 33 Posted: 25 Oct 2022
Dongseong Yang, Kyoungtae Hwang, Yeon-Ju Kim, Yunseul Kim, Yina Moon, Nara Han, Minwoo Lee, Seung-Hoon Lee and Dong-Yu Kim
affiliation not provided to SSRN, Korea Institute of Science and Technology (KIST), affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Hanbat National University, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
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single-walled carbon nanotubes, field-effect transistors, n-type doping, anion-π interaction, flexible devices