SILAR, Thin films, wide bandgap semiconductors, Complexing agent, zinc sulfide
GaAs/Si, molecular beam epitaxy, high-index silicon, photoreflectance, photoluminescence
Ti1-xHfxO2 films, spin coating, phase diagram, X-ray diffraction, X-ray Photoelectron Spectroscopy
Cubic indium gallium nitride alloys, plasma-assisted molecular beam epitaxy, mechanical properties, Berkovich indentation, Young's modulus, thin films.