GaN, Defects, positron annihilation spectroscopy, photoluminescence, electron beam irradiation
gallium nitride, positron annihilation spectroscopy, vacancy, luminescence, wide band gap semiconductor
Gd3Al3Ga2O12, glass ceramics, Ce3+ doping, luminescence, decay kinetics
InGaN/GaN, Luminescence, Shift, Zinc, Scintillator
water-splitting, hydrogen, InGaN, core-shell, microrod, photocatalysis