Zhi Jin

Chinese Academy of Sciences (CAS)

SCHOLARLY PAPERS

3

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56

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Scholarly Papers (3)

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1.

The Effects and Mechanisms of 2 Mev Proton Irradiation on High Bias Conditions of Inp/Ingaas Dhbts

Number of pages: 13 Posted: 14 Feb 2023
Yinghui Zhong, Runkun Liu, Bo Mei, Yongbo Su, Feng Yang, Jialin Zhang, Chen Zhang, Huanqing Yun, Yi Sun, Haiming Zhang and Zhi Jin
Zhengzhou University, Zhengzhou University, China Academy of Space Technology, affiliation not provided to SSRN, affiliation not provided to SSRN, Zhengzhou University, Zhengzhou University, Zhengzhou University, China Academy of Space Technology, China Academy of Space Technology and Chinese Academy of Sciences (CAS)
Downloads 31 (906,220)

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InP/InGaAs heterojunction bipolar transistors, proton irradiation, heterojunction barrier effect

2.

Effect of the Deposition Sequence of Ti and W on the Ni-Based Ohmic Contacts to N-Type 4h-Sic

Number of pages: 12 Posted: 03 Apr 2024
Niannian Ge, Caiping Wan, Wenhao Lu, Zhi Jin and Hengyu Xu
Chinese Academy of Sciences (CAS), Chinese Academy of Sciences (CAS), Chinese Academy of Sciences (CAS), Chinese Academy of Sciences (CAS) and Chinese Academy of Sciences (CAS)
Downloads 20 (1,015,999)

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4H-SiC, ohmic contacts, Deposition sequence, WxNiyC, Interfacial strain, surface morphology

3.

Abnormal Transconductance Curve Shift and Rf Performance Induced by Impact-Ionization in Inas Channel Hemts

Number of pages: 11 Posted: 18 Oct 2024
yongheng Gong, Yuxuan Chen, Jingyuan Shi, Yongbo Su, Dayong Zhang, Wuchang Ding and Zhi Jin
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Chinese Academy of Sciences (CAS)
Downloads 5 (1,189,217)

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HEMTs； InAs；impact-ionization； transconductance； small-signal equivalent model； RF performance.