Gengyu Wang

affiliation not provided to SSRN

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  • affiliation not provided to SSRN

SCHOLARLY PAPERS

2

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47

TOTAL CITATIONS

0

Scholarly Papers (2)

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1.

H+ Implantation Induced Defects Distribution in 4h-Sic Single Crystal Film Fabricated by Crystal-Ion-Slicing and its Effects on Electrical Behavior: A Multiple Characterization Study

Number of pages: 18 Posted: 03 May 2024
Dailei Zhu, Wen-bo Luo, Gengyu Wang, Kuangkuang Li, Limin wan, Yuedong Wang, YiZhuo Gao, Yao Shuai, Chuangui Wu and Wanli Zhang
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and University of Electronic Science and Technology of China (UESTC)
Downloads 29 (1,063,966)

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silicon carbide, crystal-ion-slicing, defect distribution, defect morphology, electrical effect

2.

The Evolution of H+ Implanted Defects and the Different Cleavage Behaviors Under Different Thermal Excitation in 4h-Sic During Crystal-Ion-Slicing Technology

Number of pages: 19 Posted: 03 Jun 2023
Dailei Zhu, Wen-bo Luo, Gengyu Wang, Limin wan, Yuedong Wang, Shitian Huang, Yao Shuai, Chuangui Wu and Wanli Zhang
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and University of Electronic Science and Technology of China (UESTC)
Downloads 18 (1,197,371)

Abstract:

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silicon carbide, crystal-ion-slicing, defect evolution, cleavage, nucleating point.