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juncheng xiao

affiliation not provided to SSRN

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Enhanced Stability Under Positive Bias Temperature Stress of Ln-Doped Inzno Thin Film Transistors Fabricated with a Back-Channel-Etch Structure

Number of pages: 10 Posted: 14 Jun 2023
juncheng xiao, Dong Yuan, Maio Xu, Ce Liang, Shimin Ge, Shan Li, Hongyuan Xu and Shengdong Zhang
affiliation not provided to SSRN, affiliation not provided to SSRN, University of TorontoShandong University - Department of Hematology, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, TCL China Star Optoelectronics Technology Co. LTD. and Peking University
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Abstract:

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oxide thin film transistor, stability of positive bias temperature stress, stacked structure