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Marie Dubois
Sciences Po Grenoble - Université Grenoble Alpes - Institute of Engineering
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Scholarly Papers (1)
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1.
Evidence of Twin Mediated Growth in the CVD of Polycrystalline Silicon Carbide
Number of pages: 26
Posted: 05 Jul 2023
Yann Gallou
, Marie Dubois,
Alexandre Potier
and
Didier Chaussende
Sciences Po Grenoble - Université Grenoble Alpes - Institute of Engineering, Sciences Po Grenoble - Université Grenoble Alpes - Institute of Engineering, MERSEN and Sciences Po Grenoble - Université Grenoble Alpes - Institute of Engineering
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Abstract:
Silicon carbide (SiC), Crystallographic orientation, EBSD, twin boundary, Twin plane reentrant edge
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