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Samir Ranjan Sahoo

Banaras Hindu University (BHU)

Department of Library & Information Science

Faculty of Arts

Varanasi, 221005

India

  • Banaras Hindu University (BHU)

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Epitaxial Growth of Ge0.91sn0.09 on Gaas (001) Substrate by Molecular Beam Epitaxy

Number of pages: 19 Posted: 14 Nov 2023
Dushyant Singh, Chandan Bhai Patel, Samir Ranjan Sahoo, Calbi Gunder, Samir K. Saha, Ranjan Kumar Singh, Rahul Kumar, S.-Q. Yu, G. J. Salamo and Krista R. Khiangte
Indian Institute of Technology (IIT), Gandhinagar, Banaras Hindu University (BHU), Banaras Hindu University (BHU), University of Arkansas, Fayetteville, University of Arkansas, Fayetteville, Banaras Hindu University (BHU), affiliation not provided to SSRN, University of Arkansas, Fayetteville, University of Arkansas for Medical Sciences and Indian Institute of Technology (IIT), Gandhinagar
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A3. Molecular beam epitaxy, B1. Germanium silicon alloys, B1. Nanomaterials, B2. Semiconducting germanium, A1. Nanostructures.