Shazheng Str 174, Shapingba District
Shazheng street, Shapingba district
Chongqing 400044, 400030
China
Chongqing University
FS-IGBT, SC2, circuit parameters, ruggedness, tsc.
4H-SiC MOSFET, SBD, reverse recovery, Qrr, switching loss
FS-IGBT, cell structure, dummy gate, short-circuit ruggedness, short-circuit withstand time
FS-IGBT, dynamic avalanche, UIS, reliability, circuit parameters.
SiC VDMOSFET, static and dynamic properties, surge, reliability, failure mechanism