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Huan Wu

Chongqing University

Shazheng Str 174, Shapingba District

Shazheng street, Shapingba district

Chongqing 400044, 400030

China

SCHOLARLY PAPERS

5

DOWNLOADS

268

TOTAL CITATIONS

0

Scholarly Papers (5)

An Investigation of How Circuit Parameters Affect the Short-Circuit Type 2 Ruggedness in Fs-Igbt

Number of pages: 12 Posted: 17 Dec 2024
Chongqing University, Chongqing University, Chongqing University, Chongqing University and Chongqing University
Downloads 51 (1,072,374)

Abstract:

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FS-IGBT, SC2, circuit parameters, ruggedness, tsc.

An Investigation of How Circuit Parameters Affect the Short-Circuit Type 2 Ruggedness in Fs-Igbt

Number of pages: 12 Posted: 14 Dec 2024
Chongqing University, Chongqing University, Chongqing University, Chongqing University and Chongqing University
Downloads 41 (1,196,631)

Abstract:

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FS-IGBT, SC2, circuit parameters, ruggedness, tsc.

2.

A Novel 4h-Sic Sbd-Wall-Integrated Trench Mosfet with Improved Performance

Number of pages: 15 Posted: 19 Nov 2023
Chongqing University, Chongqing University, Chongqing University, Chongqing University, Chongqing University, Delft University of Technology and Chongqing University
Downloads 67 (899,324)

Abstract:

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4H-SiC MOSFET, SBD, reverse recovery, Qrr, switching loss

3.

Design and Fabrication of Fs-Igbt with Strong Short-Circuit Ruggedness

Number of pages: 9 Posted: 13 May 2024
Chongqing University, Chongqing University, Chongqing University, Chongqing University and Chongqing University
Downloads 48 (1,086,013)

Abstract:

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FS-IGBT, cell structure, dummy gate, short-circuit ruggedness, short-circuit withstand time

4.

Dynamic Avalanche Reliability Enhancement of Fs-Igbt Under Unclamped Inductive Switching

Number of pages: 11 Posted: 19 Dec 2024
Chongqing University, Chongqing University, Chongqing University, Chongqing University and Chongqing University
Downloads 33 (1,277,121)

Abstract:

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FS-IGBT, dynamic avalanche, UIS, reliability, circuit parameters.

5.

Performance And Surge Capacity Evaluations of 1.2kv Sic Vdmosfets with Varied Jfet Width

Number of pages: 6 Posted: 14 Dec 2024
Chongqing University, Chongqing University, Chongqing University, Chongqing University, Chongqing University, Chongqing University, Delft University of Technology and Chongqing University
Downloads 28 (1,359,097)

Abstract:

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SiC VDMOSFET, static and dynamic properties, surge, reliability, failure mechanism