affiliation not provided to SSRN
A1.Computer simulation, A1. Oxygen impurities, A1. Heat transfer, A1. Mass Transfer, A2. Czochralski method, A2. PV silicon
Directional solidification, Quasi-single crystalline silicon, Crystal-melt interface deflection, Dislocation defects, Crucible rotation
A1. Heat transfer, A1. Impurities, A1. Computer simulation, A2. Growth from melt, A2. Single crystal growth, B3. Solar cells.