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Yecheng Ding

Nanjing University of Science and Technology

No.219, Ningliu Road

Nanjing, 210094

China

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Scholarly Papers (1)

1.

Precise Control of Charge Injection, Fatigue, Wake-Up and Break-Down in Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Memories

Number of pages: 20 Posted: 12 Jan 2024
Nanjing University of Science and Technology, South China Normal University, Nanjing University of Science and Technology, Nanjing University of Science and Technology, South China Normal University, Nanjing University, Nanjing University and Nanjing University of Science and Technology - School of Material Science and Engineering
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Abstract:

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Ferroelectric memory, Fatigue, Wake-up, Electric break-down, Hf0.5Zr0.5O2 film