218 Gajeong-ro, Yuseong-gu
Daejeon, 305-700
Korea, Republic of (South Korea)
Electronics and Telecommunications Research Institute
Indium-tungsten oxide, Thin-film transistor, Channel material, Threshold voltage instability, Long-term reliability
thin-film transistor (TFT), In-Sn-Zn-O (ITZO), atomic-layer deposition (ALD), amorphous oxide semiconductor, top-gate structure