Zhengweng Ma

Shenzhen University

3688 Nanhai Road, Nanshan District

Shenzhen, 518060

China

SCHOLARLY PAPERS

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Scholarly Papers (1)

1.

Electrical Performance and Reliability Analysis of Vertical Gan Schottky Barrier Diodes with Dual-Ion Implanted Edge Termination

Number of pages: 25 Posted: 01 May 2024
Shenzhen University, Shenzhen University, Shenzhen University, Shenzhen University, Shenzhen University, Shenzhen University, Chang Gung University, National Chiao Tung University, Xidian University - State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, Xidian University, Shenzhen University, Shenzhen University and Shenzhen University
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Abstract:

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Vertical GaN SBD, HVPE, dual ion co-implantation, leakage mechanism, device reliability