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Zhi Deng

Tsinghua University

Beijing, 100084

China

  • Tsinghua University

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The Interfacial Defects Characteristic and Low-Temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge- Based Mos Device and High Purity Germanium Detectors

Number of pages: 21 Posted: 01 May 2024
Shengjie Du, Xiuxia Li, Menglin Qiu, Yaohui Zhu, Weiyou Tang, Zhi Deng, Yang Tian, Yulan Li, Ke Jia, Zhengcao Li, Jianping Cheng and Shasha Lv
Tsinghua University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Tsinghua University, Tsinghua University, Tsinghua University, Tsinghua University, Tsinghua University - Key Laboratory for Advanced Materials of Ministry of Education, affiliation not provided to SSRN and Beijing Normal University (BNU) - Key Laboratory of Beam Technology and Material Modification
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surface passivation, high purity germanium detector, interface state density, surface defects analysis