Changchun
China
Northeast Normal University
avalanche photodetector, solar blind, Si substrate, β-Ga2O3 film, unipolar barrier
Ga2O3, single crystal, homoepitaxy, UV photodetector
GaN-based ultraviolet photodetectors, plasma treatment, interface engineering, ultrahigh detectivity, bias-tuned selective response
β-Ga2O3, Laser-MBE, amorphous nucleation seed layer, solar-blind photodetector
β-Ga2O3, ultra-thin AlN film, solar blind deep UV photodetectors, MOCVD
Carbon-doped semi-insulating GaN, GaN-based p-i-n structure, ultraviolet photodetectors, ultra-narrowband response window
β-Ga2O3, Laser-MBE, amorphous nucleation seed layer;solar-blind photodetector