Zhongwei Jiang

Shenzhen University

3688 Nanhai Road, Nanshan District

Shenzhen, 518060

China

SCHOLARLY PAPERS

1

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0

Scholarly Papers (1)

1.

Vertical Gan Schottky Barrier Diodes with Ohmic Contact on N-Polar by the Atomic Layer Deposition of Aluminum Oxide Interfacial Layer

Number of pages: 25 Posted: 29 May 2024
Shenzhen University, Shenzhen University, Shenzhen University, Shenzhen University, Shenzhen University, Xidian University, affiliation not provided to SSRN, affiliation not provided to SSRN, Xidian University - State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, Xidian University, Chang Gung University, National Chiao Tung University, Shenzhen University and Shenzhen University
Downloads 26 (1,085,787)

Abstract:

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GaN-on-GaN, Vertical SBDs, AlOx interfacial layer, ohmic contact, N-polar