default author photo

M. Ya. Patrova

Ioffe Institute

Politekhnicheskaya 26

St Petersburg, 194021

Russia

SCHOLARLY PAPERS

1

DOWNLOADS

23

TOTAL CITATIONS

0

Scholarly Papers (1)

1.

Features of Gettering During Irradiation of Cr/4h-Sic Photodetectors with Argon Ions

Number of pages: 15 Posted: 10 Jun 2024
Ioffe Institute, Ioffe Institute, Ioffe Institute, Ioffe Institute, Ioffe Institute, Ioffe Institute, Ioffe Institute and Ioffe Institute
Downloads 23 (1,411,822)

Abstract:

Loading...

Silicon carbide, argon, gettering, external quantum efficiency, cathodoluminescence, X-ray