Dunyuan Liao

Guangdong Academy of Sciences (GDAS) - Institute of Semiconductors

SCHOLARLY PAPERS

2

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24

TOTAL CITATIONS

0

Scholarly Papers (2)

High-Quality Thickness-Tunable Inas Nanowire Crosses Grown by Molecular-Beam Epitaxy

Number of pages: 15 Posted: 25 Jul 2024
Guangdong Academy of Sciences (GDAS) - Institute of Semiconductors, affiliation not provided to SSRN, Chinese Academy of Sciences (CAS) - Institute of Semiconductors, affiliation not provided to SSRN, Chinese Academy of Sciences (CAS) - Institute of Semiconductors and Chinese Academy of Sciences (CAS) - Institute of Semiconductors
Downloads 12 (1,290,852)

Abstract:

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GaAs, InAs, nanowire, nanowire cross, molecular-beam epitaxy

High-Quality Thickness-Tunable Inas Nanowire Crosses Grown by Molecular-Beam Epitaxy

Number of pages: 18 Posted: 25 Jun 2024
Guangdong Academy of Sciences (GDAS) - Institute of Semiconductors, affiliation not provided to SSRN, Chinese Academy of Sciences (CAS) - Institute of Semiconductors, affiliation not provided to SSRN, Chinese Academy of Sciences (CAS) - Institute of Semiconductors and Chinese Academy of Sciences (CAS) - Institute of Semiconductors
Downloads 4 (1,363,857)

Abstract:

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GaAs, InAs, nanowire, nanowire cross, molecular-beam epitaxy

2.

Metal-Sown Selective Area Growth of High Crystalline Quality Inassb Nanowires and Networks by Molecular-Beam Epitaxy

Number of pages: 21 Posted: 23 Sep 2024
Chinese Academy of Sciences (CAS) - Institute of Semiconductors, Guangdong Academy of Sciences (GDAS) - Institute of Semiconductors, Chinese Academy of Sciences (CAS) - Institute of Semiconductors, Chinese Academy of Sciences (CAS) - Institute of Semiconductors, Chinese Academy of Sciences (CAS) - Institute of Semiconductors, Chinese Academy of Sciences (CAS) - Institute of Semiconductors, Chinese Academy of Sciences (CAS) - Institute of Semiconductors and Chinese Academy of Sciences (CAS) - Institute of Semiconductors
Downloads 8 (1,282,432)

Abstract:

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Selective area growth, metal-sown, nanowires, networks, semiconductor, molecular-beam epitaxy