Qitao Zhang

Kunming University of Science and Technology

SCHOLARLY PAPERS

2

DOWNLOADS

37

TOTAL CITATIONS

0

Scholarly Papers (2)

Study on Effect of Impurity Concentration and Thermal Stress on Vacancy-Oxygen Complexes in N-Type G12 Single Crystal Silicon by Czochralski Method

Number of pages: 38 Posted: 21 Jan 2025
Kunming University of Science and Technology, affiliation not provided to SSRN, Kunming University of Science and Technology, Kunming University of Science and Technology, Kunming University of Science and Technology, Kunming University of Science and Technology, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 11 (1,317,343)

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Czochralski method, Oxygen precipitates, Vacancy-oxygen complexes, Oxygen defects, Phosphorus-doped

Study on Effect of Impurity Concentration and Thermal Stress on Vacancy-Oxygen Complexes in N-Type G12 Single Crystal Silicon by Czochralski Method

Number of pages: 38 Posted: 11 Dec 2024
Kunming University of Science and Technology, affiliation not provided to SSRN, Kunming University of Science and Technology, Kunming University of Science and Technology, Kunming University of Science and Technology, affiliation not provided to SSRN, Kunming University of Science and Technology and affiliation not provided to SSRN
Downloads 9 (1,339,340)

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Czochralski method, Oxygen precipitates, Vacancy-oxygen complexes, Oxygen defects, Phosphorus-doped

Study on the Effect of Crucible-to-Crystal Ratio on Dislocation Density During the Growth of Large Size Cz Silicon

Number of pages: 27 Posted: 29 Apr 2025
Kunming University of Science and Technology, affiliation not provided to SSRN, Kunming University of Science and Technology, Kunming University of Science and Technology, Kunming University of Science and Technology, Hebei University of Engineering, Kunming University of Science and Technology, Kunming University of Science and Technology, Kunming University of Science and Technology and Yunnan University
Downloads 13 (1,293,179)

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Czochralski method, Photovoltaic monocrystalline silicon, Solid-liquid interface, Crucible-to-crystal ratio, Dislocation density

Study on the Effect of Crucible-to-Crystal Ratio on Dislocation Density During the Growth of Large Size Cz Silicon

Number of pages: 29 Posted: 20 May 2025
Kunming University of Science and Technology, affiliation not provided to SSRN, Kunming University of Science and Technology, Kunming University of Science and Technology, Kunming University of Science and Technology, Hebei University of Engineering, Kunming University of Science and Technology, Kunming University of Science and Technology, Kunming University of Science and Technology and Yunnan University
Downloads 2 (1,391,969)

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Czochralski method, Photovoltaic monocrystalline silicon, Solid-liquid interface, Crucible-to-crystal ratio, Dislocation density.

Study on the Effect of Crucible-to-Crystal Ratio on Dislocation Density During the Growth of Large Size Cz Silicon

Number of pages: 29 Posted: 20 May 2025
Kunming University of Science and Technology, affiliation not provided to SSRN, Kunming University of Science and Technology, Kunming University of Science and Technology, Kunming University of Science and Technology, Hebei University of Engineering, Kunming University of Science and Technology, Kunming University of Science and Technology, Kunming University of Science and Technology and Yunnan University
Downloads 2 (1,391,969)

Abstract:

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Czochralski method, Photovoltaic monocrystalline silicon, Solid-liquid interface, Crucible-to-crystal ratio, Dislocation density.