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Sylvain David

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Heteroepitaxy of Gaas on Ge Buffered Silicon Substrates: Nucleation and Crystalline Defects

Number of pages: 16 Posted: 30 Jan 2025
Yann Bogumilowicz, Jean-Michel Hartmann, Anne-Marie Papon, Denise Muyard, Sylvain David, Mickael Martin and Thierry Baron
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A1, Fundamental Aspects: Atomic force microscopyA1, Fundamental Aspects: DefectsA1, Fundamental Aspects: Surface processesA2, Thin Film/Epitaxial Growth: Metalorganic chemical vapor depositionB2, Materials by Property Class: Semiconducting III-V materials