Cheng-Wei Lin

Ming Chi University of Technology

New Taipei City, 243

Taiwan

  • Ming Chi University of Technology

SCHOLARLY PAPERS

1

DOWNLOADS

34

TOTAL CITATIONS

0

Scholarly Papers (1)

Actions:
Email selected abstracts
1.

The Non-Carbon Trisilylamine Precursor as the Silicon Source for Si-Doped Hfo2 Gate Dielectrics by Atomic Layer Deposition

Number of pages: 42 Posted: 06 Feb 2025
Pi-Chun Juan, De-Hao Li, Wei-Zei Wang, Cheng-Wei Lin, Sheng-Chi Chen, Pak Man Yiu, Yen-Ho Chu, Liang-Pin Chou, Chung-Lin Huang, Wen-Lian Lee and Wen-Che Kuo
Ming Chi University of Technology, Ming Chi University of Technology, Ming Chi University of Technology, Ming Chi University of Technology, Ming Chi University of Technology, Ming Chi University of Technology, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 34 (1,012,954)

Abstract:

Loading...

High-k dielectrics, Atomic layer deposition, Trisilylamine (TSA)