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Hye Ryung Byun

Chungnam National University

Daejon, 34134

Korea, Republic of (South Korea)

  • Chungnam National University

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Scholarly Papers (1)

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Ultralow-Energy Memory Enabled by the Facile Oxidation of Hexagonal Boron Nitride for Charge Trapping Through the Van Der Waals Gap

Number of pages: 24 Posted: 05 Mar 2025
Jong Yun Kim, Oh Hun Gwon, Euiyoung Choi, Beom Kyu Shin, Hye Ryung Byun, Seok-Ju Kang, Daehyun Ryu, Tae-In Jeong, San Kim, Seungchul Kim, Philip Kim, Han Seul Kim and Young-Jun Yu
Chungnam National University, Chungnam National University, Chungbuk National University, Chungnam National University, Chungnam National University, Chungnam National University, Chungnam National University, Pusan National University, Pusan National University, Pusan National University, Harvard University, Chungbuk National University and Chungnam National University
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Abstract:

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Energy efficiency, van der Waals heterostructure, Memory devices